-8 A, -30 V. RDS(ON) = 0.019 Ω @ VGS = -10 V, RDS(ON) = 0.028 Ω @ VGS = -4.5 V. Low gate charge (21nC typical). High performance trench technology for extremely low RDS(O.
load switching and power management, battery charging circuits, and DC/DC conversion.
Features
-8 A, -30 V. RDS(ON) = .
The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. This P-Channel Logic Level MOSFET is produced using Fairchild Semicond.
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